Samsung M471A1K43EB1-CWE memory module 8 GB 1 x 8 GB DDR4 3200 MHz

Manufacturer: Samsung

Model: M471A1K43EB1-CWE

EAN: 4260580376568

The Samsung M471A1K43EB1-CWE memory module is a high-performance DDR4 memory module designed for notebooks. With a capacity of 8 GB, it offers ample space for storing and accessing data quickly. The module has a memory clock speed of 3200 MHz, ensuring fast data transfer rates and smooth multitasking capabilities.

Featuring a 260-pin SO-DIMM form factor, this memory module is compatible with various notebook models. It has a low memory voltage of 1.2V, providing energy efficiency without compromising on performance. The module's CAS latency of 21 ensures efficient data retrieval, reducing lag and enhancing overall system responsiveness.

This Samsung memory module is designed with unregistered (unbuffered) technology, enabling direct and efficient communication between the memory and the processor. It is also equipped with ECC (Error Correcting Code) technology which detects and corrects errors within the memory, ensuring data integrity and reliability.

The module's 1024M x 8 configuration enhances its compatibility and performance. It is built with high-quality components and undergoes rigorous testing to ensure durability and reliability.

Upgrade your notebook's memory with the Samsung M471A1K43EB1-CWE memory module and experience enhanced system performance, faster data access, and improved multitasking capabilities.


List of offers from 3 merchants, starting at a price of €29.90

Shop Title Price
www.pure-gaming.fr

www.pure-gaming.fr

Samsung M471A1K43EB1-CWE module de mémoire 8 Go 1 x 8 Go DDR4 3200 MHz €29.90
www.topbiz.fr

www.topbiz.fr

Samsung M471A1K43EB1-CWE module de mémoire 8 Go 1 x 8 Go DDR4 3200 MHz €38.14
www.pc21.fr

www.pc21.fr

Samsung M471A1K43EB1-CWE memory module 8 GB 1 x 8 GB DDR4 3200 MHz €42.63
www.topbiz.fr

www.topbiz.fr

Samsung M471A1K43EB1-CWE module de mémoire 8 Go 1 x 8 Go DDR4 3200 MHz €45.11

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Product information

Features
Module configuration 1024M x 8
Memory voltage 1.2 V
CAS latency 21
ECC
Memory form factor 260-pin SO-DIMM
Component for Notebook
Memory clock speed 3200 MHz
Internal memory type DDR4
Memory layout (modules x size) 1 x 8 GB
Internal memory 8 GB
Buffered memory type Unregistered (unbuffered)